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Exchange Bias of Co-Doped NiO/FeNi Bilayer

YANG Jing hai1,2,3, CAO Yu ming1,2,3, WANG Ya xin3, LIU Hui lian3, ZHANG Yong jun3   

  1. 1. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China; 2. Graduate School of the Chinese Academy of Sciences, Beijing 100049, China; 3. The Institute of Condensed State Physics, Jilin Normal University, Siping 136000, Jilin Province, China
  • Received:2007-05-15 Revised:1900-01-01 Online:2007-11-26 Published:2007-11-26
  • Contact: YANG Jing hai

Abstract: Co-doped NiO inhomogeneous films were synthesized by sputtering metallic Co chips and NiO togetherand the exchange bias of Co-doped NiO/FeNi bilayers was investigated. When Co content was up to 25.2%, the exchange bias field HE of Co-doped NiO/FeNi bilayer at room temperature increased to the maximumwhich was about three times that of the undoped-bilayer. Analysis suggests that the nanometer-sized Co-metal clusters enchased in NiO matrix played an important role in the change of magnetic behavior for the bilayers.

Key words: Co\|doped NiO/FeNi bilayer, exchange bias, cluster

CLC Number: 

  • O469