AgI的高压电学性质

Electrical Property of AgI under High Pressure

YANG Xiao cui¹, ZHANG Li xin², HAO Ai min²,³, YANG Jie⁴, GAO Chun xiao³, ZOU Guang tian³

1. Department of Physics, Baicheng Normal College, Baicheng 137000, Jilin Province, China; 2. Department of Mathematics and Physics, Hebei Normal University of Science & Technology, Qinhuangdao 066004, Hebei Province, China; 3. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China; 4. Department of Foundation, Aviation University of Air Force, Changchun 130022, China

Received:2008-01-28 Revised:1900-01-01 Online:2009-01-26 Published:2009-01-26
Contact: GAO Chun xiao

Abstract

Abstract: Insitu conductivity measurement of AgI under high pressure and ambient temperature was carried out via fabricated microcircuit on diamond anvil cell (DAC). It was observed that conductivity changed with the increasing pressure. The temperature and pressure dependences of conductivity in rsAgI were studied under several pressures at temperatures from 293 K to 443 K. The experimental data show the plot of ln(σT) versus 10³T^-1 is approximately linear. The ionic carries concentration and activation energy for defect transport were calculated. And also, we investigated the temperature and pressure dependences of conductivity in KOHtype AgI and obtained the relation between energy gap and pressure.

Key words: conductivity, high pressure, superionic conduction

CLC Number:

O521.21

YANG Xiao cui, ZHANG Li xin, HAO Ai min,, YANG Jie, GAO Chun xiao, ZOU Guang tian. Electrical Property of AgI under High Pressure[J].J4, 2009, 47(01): 102-106.

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Electrical Property of AgI under High Pressure

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