Abstract:

The growth of wurtzite indium nitride (InN) films was investigated by means of radio\|frequency plasma-assisted molecular beam epitaxy (RF\|MBE) on 6H\|SiC substrates.  In\|situ X-ray photoelectron spectra were used to determine the Wagner plot of InN. The auger parameter α′ is 85276 eV. The mass radio of In to N in InN is  1.19; the sample surface of InN/6H\|SiC, observed by an scanning electron microscope and atomic force microscope, is  reticular structure  without indium droplets; X-ray diffraction results show that the films have a preferential c-axis orientation normal to the substrate surface, FWHM of InN (0002) rocking curve is 326 arcmin; and the room temperature photoluminescence peak is at about 1 575 nm.

Key words:  molecular beam epitaxy, InN, 6H-SiC, photoelectron spectra, X-ray diffraction, photoluminescence