Journal of Jilin University Science Edition

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Geant4\|Based Simulation of 4He and 12C Ions Rutherford Backscattering on Thin Films

WANG Zhen chao1, MA Yu gang1, YANG Hai fang2, NIU Lu ying3, ZHOU Qing1, ZHAO Guang yi1, SONG Ming zhu1   

  1. 1. College of Physics, Jilin University, Changchun 130012, China; 2. Tangshan People’s Hospital, Tangshan 063001, Hebei Province, China; 3. Institute of Plasma Physics,  Chinese Academy of Sciences, Hefei 230031, China
  • Received:2012-08-20 Online:2013-07-26 Published:2013-08-06
  • Contact: MA Yu gang E-mail:mayugang@hotmail.com

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Abstract:

The Rutherford backscattering spectra (RBS) of  4He and 12C normally incident on Au,Ag,Cu thin films at 270 keV and 500 keV were simulated via Geant4. Effects of different materials, thickness and energy  of incident ions on RBS were discussed. The characters of 4He, 12C RBS were analyzed. It was found that the mass resolution is much better for 12C RBS than that for 4He RBS.

Key words: Geant4, heavy-ion, RBS analysis, thin films

CLC Number: 

  • O571.33
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