Abstract:

Based on pure nitrogen gas as dopant, N doped Mg_xZn_1-xO films were deposited on quartz substrates by radio frequency magnetron sputtering, which were subsequently annealed at 550,600,650, 700 ℃, respectively, under 10^-4 Pa. The effects of annealing temperatures on the photoelectric properties of N doped MgZnO films were studied. When the annealing temperature increased, the crystallinity of films was improved, the atomic ratio of Mg and Zn changed, the intensity of ultraviolet exciton emitting peaks increased and exhibited shift in room photoluminescence spectra, the Raman peaks at 272 and 642 cm^-1 disappeared, and the conductivity of the films changed. Having been annealed at a temperature of up to 600 ℃, the MgZnO∶N film exhibits the best ptype conductivity.

Key words: radio frequency magnetron sputtering, thin MgZnO films, N doped, rapid thermal annealing