Journal of Jilin University Science Edition

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Synthesis of a Novel Chemically Amplified Resist for i-Line Lithography

XU Na1, MENG Lei2   

  1. 1. School of Materials Science and Engineering, Jilin Institute of Chemical Technology, Jilin 132022,  JilinProvince, China; 2. School of Science, Jilin Institute of Chemical Technology, Jilin 132022, Jilin Province, China
  • Received:2013-08-09 Online:2014-09-26 Published:2014-09-26
  • Contact: MENG Lei E-mail:menglei19840512@sina.com

Abstract:

An ester acetal polymer with high acidolysis activity was combined with diazonaphthoquinone sulfonate to form a novel photoresist, which can be used as a chemically amplified iline (365 nm) photoresist with a high sensitivity. Under the action of acid, the polymer can be decomposed into small molecular fragments. Compared with the traditional photoresist system, it performs dissolution rate higher when developed with diluted alkali, and can further improve the sensitivity. And the image with linewidth less than 0.5 μm can be made.

Key words: acetal polymers, 2-diazo\, 1\, naphthoquinone-4-sulfonyl sulfonate (2,1,4-DNQ sulfonate), chemically amp

CLC Number: 

  • O63