Abstract: Multilayer triangular WS₂ films with a maximum size of 74.22 μm were prepared by atmospheric chemical vapor deposition (APCVD) method on SiO₂/Si(300 nm) substrate, and WS₂ films with clear edge, regular shape and a maximum size of 41.89 μm were synthesized on sapphire substrate. The prepared samples were characterized by optical microscope (OM), scanning electron microscope (SEM), Raman spectrometer and photo-emission spectrometer (PL). Combined with the morphology and size of the sample, the effects of experimental parameters such as growth temperature, dosage ratio of tungsten source and sodium chloride, and different substrates on the growth of WS₂ thin films were analyzed. The experimental results show that temperature has the greatest influence on the growth of WS₂ films by APCVD, and high temperature is conducive to the growth of WS₂ films with high crystal quality. The higher the temperature is, the more regular the film shape is. At the optimum temperature, the smaller the wave number difference is, the fewer the film layers are, the fewer the grain defects are, and the higher the luminous intensity is. The dosage ratio of tungsten source and sodium chloride corresponding to different temperatures is different. The addition of proper amount of sodium chloride can improve the supersaturation of tungsten source in the reaction system, promote the smooth progress of the reaction, and is more conducive to the growth of WS₂ thin film. The growth temperature required by the growth system for preparing WS₂ thin films on different substrates is different, and the growth temperature required on sapphire substrate is higher under the same experimental conditions.

Key words: tungsten disulfide, chemical vapor deposition (CVD) method, crystal growth,  , Raman spectrum, photoluminescence spectrum, luminous property