Abstract: In order to investigate the effects of Ag doping concentration on the photoelectric performance of In₂O₃ thin films, such as bandgap width, optical switching ratio and optical detectivity, Ag doped In₂O₃ (In₂O₃∶Ag) thin films with different concentrations were prepared by magnetron sputtering method on quartz (SiO₂) substrate. The crystal structure, elemental content and valence state, surface morphology, bandgap width and photoelectric performance of In₂O₃∶Ag thin films were analyzed by using X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and ultraviolet-visible spectrophotometer. The results show that with the increase of Ag doping concentration, the transmittance of In₂O₃∶Ag thin films gradually decreases, the bandgap width decreases from 2.47 eV to 2.08 eV, and the optical detectivity and optical switching ratio increase. The spectral response range increases with the increase of doping concentration.

Key words: indium oxide, Ag doping, magnetron sputtering, bandgap width, photoelectric performance