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Parameters Design of Pixel Circuit for OLED Active Matrix Driving Array Based on Poly-Si TFT

WANG Li-jie1, ZHANG Tong1,2, LIU Shi-yong1   

  1. 1. State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023, China;2. Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Science, Changchun 130033, China
  • Received:2004-06-30 Revised:1900-01-01 Online:2005-05-26 Published:2005-05-26
  • Contact: ZHANG Tong

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Abstract: Basis on the characters of the OLED and poly-Si TFT, the values of the device parameters in the poly-Si TFT AM-OLED pixel circuit w ere determined by means of calculation and simulation. The pixel circuit was sim ulated with the software aim-spice, and the values of the device parameters wer e optimized.

Key words: poly silicon, thin film transistor, organic light emit

CLC Number: 

  • TN27
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