Abstract:

With a mixture of nitrogen and argon as sputtering gas and ZnO as target N doped ZnO films were prepared via radio frequency magnetron sputtering technique by changing the nitrogen flux. The nitrogen flux was controlled to be 0,8,20,32 mL/min, respectively, and the effect of nitrogen flux on the optical properties of ZnO∶N thin films was investigated. It was found that with the nitrogen flux increasing, the band gap decreased and the absorption band edge showed red shift. In the roomtemperature photoluminescence spectra, the nearbandedge emission peaks showed red shift. And the intensity ratio between the ultraviolet nearedge emission and the visible deep energy level emission reduced. The Raman peaks at 272，642 cm^-1increased  with the nitrogen flux increasing.

Key words: ZnO∶N film, sputtering gas, optical property