Journal of Jilin University Science Edition ›› 2024, Vol. 62 ›› Issue (4): 985-991.
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HAN Mengyao, SUN Hui, ZHOU Ouxiang, QI Dongli, LI Tonghui, SHEN Longhai
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Abstract: In order to investigate the effects of Ag doping concentration on the photoelectric performance of In2O3 thin films, such as bandgap width, optical switching ratio and optical detectivity, Ag doped In2O3 (In2O3∶Ag) thin films with different concentrations were prepared by magnetron sputtering method on quartz (SiO2) substrate. The crystal structure, elemental content and valence state, surface morphology, bandgap width and photoelectric performance of In2O3∶Ag thin films were analyzed by using X-ray diffraction, X-ray photoelectron spectroscopy, scanning electron microscopy and ultraviolet-visible spectrophotometer. The results show that with the increase of Ag doping concentration, the transmittance of In2O3∶Ag thin films gradually decreases, the bandgap width decreases from 2.47 eV to 2.08 eV, and the optical detectivity and optical switching ratio increase. The spectral response range increases with the increase of doping concentration.
Key words: indium oxide, Ag doping, magnetron sputtering, bandgap width, photoelectric performance
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HAN Mengyao, SUN Hui, ZHOU Ouxiang, QI Dongli, LI Tonghui, SHEN Longhai. Preparation and Photoelectric Performance of Ag Doped In2O3 Thin Films[J].Journal of Jilin University Science Edition, 2024, 62(4): 985-991.
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http://xuebao.jlu.edu.cn/lxb/EN/Y2024/V62/I4/985
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