穿通增强型硅光电晶体管的结构及参数优化

J4 ›› 2013, Vol. 31 ›› Issue (1): 25-30.

穿通增强型硅光电晶体管的结构及参数优化

丁传鹏, 周泉, 陆逢阳, 王宝续, 常玉春

吉林大学电子科学与工程学院, 长春 130012

收稿日期:2012-06-07 出版日期:2003-01-24 发布日期:2013-04-01
作者简介:丁传鹏（1986—）, 男, 长春人, 吉林大学硕士研究生, 主要从事集成电路设计方向研究, （Tel）86-13843181839（E-mail）dingcp10@mails.jlu.edu.cn|通讯作者：常玉春（1973—）, 男, 长春人, 吉林大学教授, 博士生导师, 主要从事集成电路设计方向研究, （Tel）86-13180826212（E-mail）changyc@jlu.edu.cn。
基金资助:
国家自然科学基金资助项目（61076046）

Structure and Parameters Optimization of Punchthrough Enhanced Phototransistor

DING Chuan-peng, ZHOU Quan, LU Feng-yang, WANG Bao-xu, CHANG Yu-chun

College of Electronic Science and Engineering, Jilin University, Changchun 130012, China

Received:2012-06-07 Online:2003-01-24 Published:2013-04-01

摘要/Abstract

摘要：

为克服各种常用光电探测器件的缺点, 对穿通增强型硅光电晶体管进行了结构优化和参数优化。将窄基区穿通晶体管仅在一侧与宽基区光电晶体管复合的传统结构, 改进为窄基区穿通晶体管在中间, 两侧各复合一个长度减半的宽基区光电晶体管。同时, 对不同窄基区宽度下的暗电流、光生电流及光电响应率等随偏压变化的电学性能和光电转换特性进行仿真, 得到窄基区宽度最优参数。然后对优化后的器件在不同光强下的光生电流和光电响应率随偏压的变化进行了仿真, 分析了器件在不同光强下的响应特性。结果表明, 当窄基区宽度为0.6 μm时, 器件性能折中达到最优, 在0.5 V偏压下, 器件暗电流仅为1 μA；入射光功率密度为10^-7 W/cm²时, 器件响应率高达4×10⁶ A/W。

关键词: 穿通增强型硅光电晶体管, 窄基区宽度, 暗电流, 光生电流, 光电响应率

Abstract:

We optimize the structure and parameters of the punchthrough enhanced phototransistor. We change the structure from traditional form, which is the combination of a NB (Narrow Base) punchthrough transistor and a WB (Wide Base) phototransistor to just one side, to a new shape of the narrow base punchthrough transistor sandwiched in two wide base phototransistors which are both half of the old length. We investigate the electrical properties and optical conversion performance of the device such as dark current, photocurrent and optical sensitivity versus bias voltage with different width of the narrow base region. The optimized width of the narrow base is obtained after we analyze the simulated result. The analysis of the photocurrent and optical sensitivity versus bias voltage with different light power are presented to reveal the character of different light power. When the width of the narrow base is 0.6 μm, the performance of the device is a optimum compromise. The dark current is only 1 μA when the bias voltage is 0.5 V. The optical sensitivity is 4×10⁶ A/W when the light power is 10^-7 W/cm².

Key words: punchthrough enhanced phototransistor, the width of the narrow base, dark current, photocurrent, optical sensitivity

中图分类号:

TN364

丁传鹏, 周泉, 陆逢阳, 王宝续, 常玉春. 穿通增强型硅光电晶体管的结构及参数优化[J]. J4, 2013, 31(1): 25-30.

DING Chuan-peng, ZHOU Quan, LU Feng-yang, WANG Bao-xu, CHANG Yu-chun. Structure and Parameters Optimization of Punchthrough Enhanced Phototransistor[J]. J4, 2013, 31(1): 25-30.