基于0.5 μm CMOS工艺的BOOST变换器设计

J4 ›› 2012, Vol. 30 ›› Issue (1): 1-4.

BOOST Converter Design in 0.5 μm CMOS Technology

DING |Ling^a|b|YU Zhao-jie^a|b|LI Jing^a|b|ZHOU Quan^a|b|DU Guo-tong^a|b|CHANG Yu-chun^a|b

a.College of Electronic Science and Engineering,Jilin University,Changchun 130012,China;b.State Key Laboratory on Integrated Optoelectronic

Received:2011-11-23 Online:2012-01-29 Published:2012-03-20

Abstract

Abstract:

Portable communication devices demand DC-DC converter with low ripple output voltage and high efficiency,in order to solve this problem,a design of Synchronous rectification mode BOOST DC-DC converter circuit is proposed, providing higher chip conversion efficiency.The circuit design is based on CSMC 0.5　μm CMOS technology and the circuit layout is realized with a standard 0.5　μm doublepoly threemetal CMOS process.The simulation results show that the proposed converter has advantages of stable out voltage,low ripple voltage and high power conversion efficiency.

Key words: boost converter, synchronous rectifier, DC-DC converter

CLC Number:

TN431.1

DING Ling, TU Zhao-Jie, LI Jing, ZHOU Quan, DU Guo-Tong, CHANG Yu-Chun. BOOST Converter Design in 0.5 μm CMOS Technology[J].J4, 2012, 30(1): 1-4.

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BOOST Converter Design in 0.5 μm CMOS Technology

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