DC磁控溅射沉积FexN薄膜成分及生长机制

DC磁控溅射沉积Fe_xN薄膜成分及生长机制

王欣¹,高丽娟¹,郑伟涛¹,徐跃²

1.吉林大学材料科学与工程学院,长春,130023; 2.吉林大学分析测试中心,长春,130023

收稿日期:2002-04-23 修回日期:1900-01-01
通讯作者: 王欣

The Composition and Growth Mechanism of Iron Nitride Thin Films Deposited by DC Magnetron Sputtering

WANG Xin¹,GAO Li-juan¹,ZHENG Wei-tao¹,XU Yue²

1.College of Materials Science and Engineering , Jilin University , Changchun 130023 , China; 2. Measurement and Testing Center , Jilin University , Changchun 130023 , China

Received:2002-04-23 Revised:1900-01-01
Contact: WANG Xin

摘要/Abstract

摘要： 使用直流磁控溅射方法,Ar/N2作为放电气体,在玻璃衬底上沉积FexN薄膜.利用X射线光电子能谱(XPS)、掠入射小角X射线散射(GISAXS)、X射线衍射(XRD)、掠入射非对称X射线衍射(GIAXD)和原子力显微镜(AFM)研究薄膜的成分和生长机制.实验结果表明,在5%N2流量下获得FeN0.056单相化合物,薄膜中氮原子含量为14%,该值与α"-Fe16N2相中的氮原子的化学计量(11%)接近;GISAXS和AFM对薄膜表面分析表明,随溅射时间增加,薄膜变得愈加不光滑,用动力学标度的方法定量分析结果为:薄膜表面呈现自仿射性质,静态标度指数α≈0.65,生长指数β≈0.53±0.02,动力学标度指数z≈1.2,薄膜生长符合Kolmogorov提出的能量波动概念的KPZ模型指数规律.

关键词: FexN薄膜, 直流磁控溅射, 生长机制

Abstract: Iron nitride films were deposited on glass substrate by DC magnetron sputtering with mixed Ar／N2 as discharge (N2 fraction of 5％) and at different time ( 30 min , 20 min , 10 min , and 5 min , respectively ) . The composition of the films was analyzed by means of X-ray photoelectron spectroscopy experiment (XPS) . The layer phases and the surface morphologies of the films were characterized with the aid of grazing incidence X-ray scattering and X-ray diffraction as well as atomic force microscopy . For the film grown at N2 fraction of 5 ％ , the phase of FeN_0.056appeared . The surface of the films showed the selfaffine character . The values of roughness exponent α≈ 0.65 and growth exponent β≈ 0.53 are in agreement with the improvised KPZ exponents based on Kolmogorov's energy cascade concept .

Key words: Fe_xN film, DC magnetron sputtering, growth mechanism

中图分类号:

O482.54

王欣,高丽娟,郑伟涛,徐跃. DC磁控溅射沉积Fe_xN薄膜成分及生长机制[J]. J4, 2002, 40(04): 397-399.

WANG Xin,GAO Li-juan,ZHENG Wei-tao,XU Yue. The Composition and Growth Mechanism of Iron Nitride Thin Films Deposited by DC Magnetron Sputtering[J]. J4, 2002, 40(04): 397-399.

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