J4

• 物理 • 上一篇    下一篇

用蒙特卡罗方法研究不同厚度的金对X射线在金酞菁铜界面附近剂量分布的影响

张 慧, 赵广义, 赵宝奎, 马玉刚, 李险峰, 董文斌, 张建芳, 李海波, 苗 闯, 刘广涛, 王文全   

  1. 吉林大学 物理学院, 长春 130021
  • 收稿日期:2007-11-27 修回日期:1900-01-01 出版日期:2008-11-26 发布日期:2008-11-26
  • 通讯作者: 赵广义

MonteCarlo Calculation of XRay Dosedistribution Nearby AuCuPc Interface with Different Thicknesses of Au

ZHANG Hui, ZHAO Guangyi, ZHAO Baokui, MA Yugang, LI Xianfeng, DONG Wenbin, ZHANG Jianfang, LI Haibo, MIAO Chuang, LIU Guangtao, WANG Wenquan   

  1. College of Physics, Jilin University, Changchun 130021, China
  • Received:2007-11-27 Revised:1900-01-01 Online:2008-11-26 Published:2008-11-26
  • Contact: ZHAO Guangyi

摘要: 用蒙特卡罗方法计算不同厚度的金在金酞菁铜界面的剂量增强系数. 结果表明, 金的厚度影响界面附近的剂量增强效果. 当金的厚度为0~8 μm时, 剂量增强系数随金厚度的增加而增大. 

关键词: 蒙特卡罗方法, 有机半导体, 剂量增强系数, 界面

Abstract: The doseenhancementfactors of different thicknesses of AuCuPc interfaces were calculated via MonteCarlo method. The calculated results demonstrate that the thickness of Au has an distinct effect on dose enhancement of Xray nearby the AuCuPc interface. When the thickness of Au is 0~8 μm, doseenhancementfactor of X-ray increases along with the increase of the thickness of Au.

Key words: MonteCarlo method, organic semiconductor, doseenhancementfactor, interface

中图分类号: 

  • O434.1