在不同退火温度下射频磁控溅射CNx膜的电子场发射性质

在不同退火温度下射频磁控溅射CN_x膜的电子场发射性质

李哲奎¹, 李俊杰², 金曾孙^1,2, 吕宪义^1,2, 白晓明³, 郑冰³, 田宏伟³, 于狭升³

1. 延边大学物理系, 延吉 133002; 2. 吉林大学超硬材料国家重点实验室, 长春 130012; 3. 吉林大学材料科学与工程学院材料科学系, 长春 130012

收稿日期:2004-04-07 修回日期:1900-01-01 出版日期:2005-03-26 发布日期:2005-03-26
通讯作者: 金曾孙

Electron Field Emission of RF Magnetron Sputtered CN_x Films Annealed at Different Temperatures

LI Zhe-kui¹, LI Jun-jie², JIN Zeng-sun², LvXian-yi², BAI Xiao-ming³,ZHENG Bing³, TIAN Hong-wei³, YU Xia-sheng³

1. Department of Physics, Yanbian University, Yanji 133002, Jilin Province, China;2. State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, China;3. Department of Materials Science, College of Materials Science and Engineering, Jilin University,Changchun 130012, China

Received:2004-04-07 Revised:1900-01-01 Online:2005-03-26 Published:2005-03-26
Contact: JIN Zeng-sun

摘要/Abstract

摘要： 对磁控溅射沉积得到的CN_x膜在不同温度下进行真空退火, 退火前后CN_x膜的化学键合采用X射线光电子能谱表征. 结果发现, 沉积的CN_x膜中氮原子与sp, sp², sp³杂化碳原子相键合, 并对经过退火的CN_x膜的键合结构和电子场发射特性的影响进行了研究.

关键词: 射频磁控溅射, CN_x膜, 退火温度, 电子场发射

Abstract: The carbon nitride films deposited by RF magnetron sputtering in a pure N₂ discharge were annealed in vacuum up to 900 ℃. The chemical bonding of the films was studied using X-ray photoelectron spectros copy and Raman spectra. It was found that the nitrogen atoms were bound to sp, sp² and sp³ hybridized carbon atoms in as-deposited films. The effects of the thermal annealing on the bonding structure and the electron field emission characteristics of CN_x films were investigated.

Key words: RF magnetron sputtering, CN_x film, annealing temperature, electron field emission

中图分类号:

O484.5

李哲奎, 李俊杰, 金曾孙, 吕宪义, 白晓明, 郑冰, 田宏伟, 于狭升. 在不同退火温度下射频磁控溅射CN_x膜的电子场发射性质[J]. J4, 2005, 43(02): 182-184.

LI Zhe-kui, LI Jun-jie, JIN Zeng-sun, LvXian-yi, BAI Xiao-ming,ZHENG Bing, TIAN Hong-wei, YU Xia-sheng. Electron Field Emission of RF Magnetron Sputtered CN_x Films Annealed at Different Temperatures[J]. J4, 2005, 43(02): 182-184.

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