吉林大学学报(理学版)

• 电子科学 • 上一篇    下一篇

半导体纳米材料CdSe/ZnS在显示器件中的应用

刘岩1,2, 白晓2, 李婷婷2, 朱伟2, 沈启慧1   

  1. 1. 吉林化工学院 化学与制药工程学院, 吉林 吉林 132022; 2. 吉林大学 化学学院, 长春 130012
  • 收稿日期:2015-05-26 出版日期:2016-05-26 发布日期:2016-05-20
  • 通讯作者: 沈启慧 E-mail:qihuishen@126.com

Application of Semiconductor NanomaterialsCdSe/ZnS on Display Devices

LIU Yan1,2, BAI Xiao2, LI Tingting2, ZHU Wei2, SHEN Qihui1   

  1. 1. School of Chemistry and Pharmaceutical Engineering, Jilin Institute of Chemical Technology, Jilin 132022, Jilin Province, China; 2. College of Chemistry, Jilin University, Changchun 130012, China
  • Received:2015-05-26 Online:2016-05-26 Published:2016-05-20
  • Contact: SHEN Qihui E-mail:qihuishen@126.com

摘要:

以半导体纳米材料CdSe/ZnS作为发光层, ZnO作为电子传输层, 用Al和氧化铟锡(ITO)分别作为两极材料, 采用旋涂和真空蒸镀膜技术制备半导体发光二极管, 并对其光学性质进行表征. 结果表明: 该器件发射黄光, 峰位为575 nm, 半峰宽30 nm, 最大发光强度2 000 cd/m2; 在较高的电流密度下, 该器件的电致发光效率无
明显衰减; 当半导体纳米材料CdSe/ZnS及ZnO分别作为发光层和电子传输层时, 可制备具有高电流密度且稳定的发光二极管主体材料.

关键词: 半导体纳米材料, 电致发光, 发光二极管, 显示器件

Abstract:

We used CdSe/ZnS semiconductor nanometerials as lightemitting layers, ZnO as electrontransport layer (ETL), Al and ITO as bipolar  materials. The semiconductor lightemitting diodes (LED) were prepared by spin coating and vacuum evaporation coating technology. We characterized its optical properties. The experimental results show that the device emits yellow light, the peak position is 575 nm, the full width half maximum is 30 nm, the maximum luminous intensity is 2 000 cd/m2, the luminescence efficiency of device has no obvious decay under higher current density, and semiconductor materials CdSe/ZnS and ZnO are desired materials as lightemitting layer and electron transport layer of LED with high current density and stable emitting.

Key words: semiconductor nanomaterial, electro luminescence, lightemitting diode (LED), display device

中图分类号: 

  • TN383.1