J4 ›› 2012, Vol. 50 ›› Issue (01): 122-125.

• 电子科学 • 上一篇    下一篇

溶胶-凝胶法ZnO薄膜的制备及性能表征

辛春雨1,   |张继德1,  |刘成有2,  |蒋大勇3,  |秦杰明3   

  1. 1. 白城师范学院 物理系, 吉林 白城 137000|2. 通化师范学院 物理系, 吉林 通化 134001|3. 长春理工大学 材料科学与工程学院, 长春 130022
  • 收稿日期:2011-01-26 出版日期:2012-01-26 发布日期:2012-03-06
  • 通讯作者: 辛春雨 E-mail:xinchunyu001@tom.com

Preparation and Performance Characterization |of Zinc Oxide Thin Films by Means of Sol Gel Method

XIN Chun yu1,  |ZHANG Ji de1,  |LIU Cheng you2,  |JIANG Da yong3,  |QIN Jie ming3   

  1. 1. Department of Physics, Baicheng Normal University, Baicheng 137000, Jilin Province, China|2. Department of Physics, Tonghua Normal University, Tonghua 134001, Jilin Province, China|3. School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
  • Received:2011-01-26 Online:2012-01-26 Published:2012-03-06
  • Contact: XIN Chun yu E-mail:xinchunyu001@tom.com

摘要:

采用溶胶-凝胶法在玻璃衬底上制备ZnO薄膜, X射线衍射(XRD)结果表明: 晶粒尺寸随退火温度的升高而增大, 与原子力显微镜(AFM)分析薄膜表面形貌的结果相符; UV\|Vis吸收谱线表明, 在ZnO带边吸收的位置出现较强的吸收, 并得到600 ℃退火处理的薄膜禁带宽度为3.23 eV; 室温光致发光谱表明, 所有薄膜均在386.5 nm处出现一个紫外发射峰, 当退火温度升高时, 深能级发射受到抑制.

关键词: 溶胶-凝胶法, ZnO薄膜, 光学性能

Abstract:

Zinc oxide thin films were synthesized on  glass substrates by means of sol\|gel method.The X\|ray diffraction (XRD) results show  that the grain size increased with the increasing of annealing temperature, which was confirmed by the morphology by atomic force microscopy (AFM). The   UV\|Vis results show  that there is a stronger absorption on the near band edge of zinc oxide and the  bandgap of the film at 600 ℃ by means of annealing treatment is 3.23 eV. Room\|temperature photoluminescence (PL) results show that all films  show UV emission peak at  386.5 nm, the deep level emission is restrained by the increase of annealing temperature.

Key words: sol-gel method, zinc oxide thin film, optical property

中图分类号: 

  • TN814