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Electronic Structures of Nitrogen-doped (10,0) Single-walled Carbon Nanotubes

YU Shan sheng, WEN Qing bo, ZHENG Wei tao   

  1. College of Materials Science and Engineering, Jilin University, Changchun 130012, China
  • Received:2007-02-12 Revised:1900-01-01 Online:2008-01-26 Published:2008-01-26
  • Contact: ZHENG Wei tao

Abstract: Calculations have been made for the electronic structures of (10,0) single-walled carbon nanotube containing nitrogen impurity atoms by means of abinitiodensity functional theory. When carbon atom of carbonnanotube is substituted by nitrogen atom, the carbon nanotube will be turned into n-type semiconductor. However, when nitrogen atom is absorbed on the outer surface of the carbon nanotube, it will be transformed into p-type semiconductor. And a portion of electrons inp orbital at the carbon atom adjacent to nitrogen is excited into d orbital. 

Key words: carbon nanotube, nitrogen, doping, electronic structure

CLC Number: 

  • TB383