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Growth of ABAC Structured Film by Computer Simulation

ZHANG Shun yan1, XU Xiao hong2   

  1. 1. Department of Mathematics and Physics, Hegang Normal College, Hegang 154107, Heilongjiang Province, China; 2. School of Chemistry and Materials Science, Shanxi Normal University, Linfen 041004, Shanxi Province, China
  • Received:2008-01-15 Revised:1900-01-01 Online:2009-01-26 Published:2009-01-26
  • Contact: XU Xiao hong

Abstract: The growth of ABAC structured film by means of pulsed laser deposition was simulated by the Monte Carlo procedure. In the model, we introduced the three-hollow site with a layer dislocation in order to realize the ABAC growth mode. The quality of the film is controlled by three parameters, namely, the temperature of the substrate, the kinetic energy of the atoms and the coverage of per pulse. The simulated results show that the quality of the films is strongly dependent on the three parameters. We analyzed the mismatch of the film and found the suitable parameters, under which the high quality film can be obtained.

Key words: Monte Carlo simulation, pulsed laser deposition, displacement

CLC Number: 

  • TB383