Abstract:

The Li\|N dual doped ZnO (ZnO∶(Li,N)) thin films prepared on quartz substrates by means of RF magnetron sputtering with Li3N as dopant source and Ar/O₂ with diffetent molar ratio  as sputtering gas. The as\|grown films were annealed in vacuum for 30 min at 600 ℃. The results show when n(Ar)∶n(O₂)=60, the stable p\|type ZnO∶(Li,N) thin film was obtained. XRD result shows that the film exhibits high preferential orientation in c\|axis direction. The p\|type conductivity results from the defect of substitutional Zn at O site (Li_Zn) via the analysis of temperature\|dependent PL,  and the optical acceptor level of the  Li_Zn  was calculated to be 131.6 meV  above the valence band maximum. The effects of the growth ambience on conductivity type, crystal structure and low temperature PL were studied.

Key words: RF magnetron sputtering, Li-N dual doped, zinc oxide, semiconductor