J4 ›› 2010, Vol. 48 ›› Issue (03): 478-481.

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Influences of Annealing Temperatures on |Structure and Optical Properties of ZnO/SiO2Composite Thin Films

LI Qi yuan, WEI Chang ping, SUN Xiao fei   

  1. School of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
  • Received:2009-05-26 Online:2010-05-26 Published:2010-05-19
  • Contact: WEI Chang ping E-mail:changpingwei@yahoo.com.cn

Abstract:

ZnO/SiO2 (ZSO) composite thin films were deposited on glass substrates by means of sol\|gel method. The microstructure, crystal structure, transmission and photoluminescent properties of the samples were characterized by SEM, XRD, UV\|Vis and PL, respectively. The results of SEM show that double\|layer structure can be observed clearly. The particles became larger as the annealing temperature rised and partly agglomerated. The results of XRD indicate that hexagonal wurtzite ZnO was formed after annealing, and with the annealing temperature rising, the peak intensity increased, while particle size also increased. The results of UV\|Vis indicate that there were absorption edges for both ZnO and SiO2. In double\|layer composite thin films, the two different materials ZnO and SiO2 caused curves near 360   nm to be unsmooth, and the edges to be blue shift at the same time. The samples have a higher transmittance having been annealed at 400 ℃. The PL spectra show that there were emission peaks in the ultraviolet region and blue region separately when the samples were excited at  355 nm. The photoluminescent intensity caused by defects weakened as the defects density reduced with the rising annealing temperature.

Key words: composite thin film, sol\, gel, structure, optical property

CLC Number: 

  • O484.4