Abstract:

 High efficient undoped blue organic light\|emitting devices (OLEDs) with a typical structure of ITO/2T\|NATA(40 nm)/NPB(10 nm)/N-BDAVBi((3+d) nm)/ADN(7 nm)/N\|BDAVBi((3+d) nm)/ADN(7 nm)/Alq3(30 nm)/LiF(0.5  nm)/Al were prepared by means of  thermal vacuum deposition method with  N\|BDAVBi as the emitting layer. The results show that the device has a maximum luminous efficiency of 4.38 cd/A at 6 V when the thickness of N\|BDAVBi layer is 7 nm,  and the device has a maximum luminance of 13 200 cd/m2 at 13 V when the thickness of N\|BDAVBi layer is 11 nm. The CIE coordinates of the device are within the blueregion when the voltage changes from 0 V to 13 V.

Key words: organic light-emitting device (OLED), undoped, efficiency, blue emission