GaAlAs/GaAs单量子阱列阵半导体激光器

吉林大学学报(工学版) ›› 2001, Vol. ›› Issue (4): 63-65.

GaAlAs/GaAs单量子阱列阵半导体激光器

万春明, 徐安怀, 曲轶

长春光学精密机械学院高功率半导体激光国家重点实验室, 吉林长春, 130022

收稿日期:2001-04-21 出版日期:2001-10-25

Semiconductor Laser with GaAlAs/GaAs Single Quantum Well Array

WAN Chun-ming, XU An-huai, QU Yi

National Key Lab of High-Power Semiconductor Laser, Changchun Institute of Optics and Fine Mechanics, Changchun 130022, China

Received:2001-04-21 Online:2001-10-25

摘要/Abstract

摘要： 分析了影响列阵半导体激光器输出功率的因素.利用分子束外延生长方法生长出GaAlAs/GaAs梯度折射率分别限制单量子阱材料(CRIN-SCH-SQW).利用该材料制作出的列阵半导体激光器室温连续输出功率可达10W,峰值波长为806～809nm.

关键词: 半导体激光器, 列阵, 分子束外延, 量子阱

Abstract: The GaAlAs/GaAs material with gradient refraction index separate confinement single quatum well structure has been worked out by MBE. Array laser diodes CW output power achieves 10W under the room temperature. The peak wavelength is 806～809 nm.

Key words: semiconductor laser, array, MBE, quantum well

中图分类号:

O475

万春明, 徐安怀, 曲轶. GaAlAs/GaAs单量子阱列阵半导体激光器[J]. 吉林大学学报(工学版), 2001, (4): 63-65.

WAN Chun-ming, XU An-huai, QU Yi . Semiconductor Laser with GaAlAs/GaAs Single Quantum Well Array[J]. 吉林大学学报(工学版), 2001, (4): 63-65.

参考文献

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