吉林大学学报(工学版) ›› 2001, Vol. ›› Issue (4): 63-65.

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Semiconductor Laser with GaAlAs/GaAs Single Quantum Well Array

WAN Chun-ming, XU An-huai, QU Yi   

  1. National Key Lab of High-Power Semiconductor Laser, Changchun Institute of Optics and Fine Mechanics, Changchun 130022, China
  • Received:2001-04-21 Online:2001-10-25

Abstract: The GaAlAs/GaAs material with gradient refraction index separate confinement single quatum well structure has been worked out by MBE. Array laser diodes CW output power achieves 10W under the room temperature. The peak wavelength is 806~809 nm.

Key words: semiconductor laser, array, MBE, quantum well

CLC Number: 

  • O475
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