高压下WSe2的电学性质及金属化相变

Abstract

Abstract:

The pressure dependence of electrical resistivity of WSe₂ was observed by means of in situ high pressure electrical resistivity measurement in a range of 0—48.2 GPa . The temperature dependence of the electrical resistivity of WSe₂ was measured under different pressures. The results show that the pressure response of the electrical resistivity of WSe₂ was associated with the conduction of pressure-|induced ionization of impurity levels; owing to the pressure induced band gap closure, WSe2 sample underwent an isostructural semiconductor\|metal phase transition at 38.1 GPa.

Key words: WSe₂, high pressure, electrical resistivity, metallization

CLC Number:

O521

LIU Bao, BANG Gang, TUN Bao-Jia. Electrical Properties and Metallization of WSe2 under High Pressure[J].J4, 2011, 49(05): 929-931.

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Electrical Properties and Metallization of WSe2 under High Pressure

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