关键词: 半导体技术, 器件建模, BSIMSOI, 部分耗尽型绝缘体上硅, 参数提取

Abstract:

Based on BSIM SOI model the self-heating effect, body contact effect and floating body effect of deep-submicron PD SOI MOSFET devices are investigated. The methods of modeling and parameter extraction of PD SOI MOSFET are developed. The above methods are applied to the devices fabricated in 0.35 μm PD SOI process in Xi'an Microelectronics Technology Institute. The extracted device model shows good agreement with experimental data, which validates the accuracy, effectiveness of the proposed methodology.

Key words: semiconductor technology, device modeling, BSIMSOI, partially depleted SOI(PD SOI), parameter extraction