吉林大学学报(工学版)

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Analysis of temperature field in diamond synthetic chamber based on ANSYS

Li Rui1,2; Ma Hong-an1,2; Han Qi-gang1;Ren Guo-zhong3;Yin Bin-hua1; Liu Wan-qiang1;Jia Xiao-peng1
  

  1. 1.National Lab of Superhard Materials, Jilin University, Changchun 130012,China; 2.College of Materials Science and Engineering, Changchun University of Science and Technology, Changchun 130012, China; 3.Faculty of Material & Photoelectronic Physics, Xiangtan University, Xiangtan 411105, China
  • Received:2007-01-28 Revised:2007-04-28 Online:2008-05-01 Published:2008-05-01

Abstract:

Using finite element analysis softerware ANSYS, the transient thermal and electrical coupling analysis is carried out on the temperature field inside the chamber in which diamond is synthesized using flaky catalyst. The influence of the anvil's temperature on the synthetic effect of diamond is taken into consideration, and a load step document is created to realize the anvil's temperature loading. The timehistory graph of the temperature in the centre of the chamber illumates that the higher the initial anvil's temperature is, the quicker the chamber temperature reaches thermal equilibrium state. This relationship directly affects the diamond's nucleation and growth. Numerical nodal temperature indicates the tendency that, inside the synthetic chamber, the centre temperature is higher than elsewhere; the axial temperature difference is about 80 ℃, and radial temperature difference is about 50 ℃. Numerical analysis of unit heat generation rate and thermal flux density is conducted. Results show that the chamber's boundary extermal thermal conduction is the primary factor that leads to temperature ununiformity distrubtion inside the chamber.

Key words: synthesize under high pressure, finite elements method, industry diamond, temperature field

CLC Number: 

  • TQ164
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