吉林大学学报(工学版) ›› 2016, Vol. 46 ›› Issue (5): 1399-1404.doi: 10.13229/j.cnki.jdxbgxb201605003

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IGBT gate drive technology based on capacitance feedback in stage

YANG Yang1, WANG Qing-nian1, GONG Yi-min2, WU Cui-cui2, JIANG Hai-long2   

  1. 1.College of Automotive Engineering, Jilin University, Changchun 130022, China;
    2.College of Physics, Jilin University, Changchun 130012, China
  • Received:2015-05-11 Online:2016-09-20 Published:2016-09-20

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Abstract: The Insulate Gate Bipolar Transistor (IGBT) turn-off process is decomposed into multiple stages. The capacitive coupling feedback is used in the rise of voltage and the fall of current in the IGBT turn-off process to control dv/dt and di/dt independently and to achieve double restraints of EMI and inverse peak voltage. The Pspiece model is used to simulate switching loss and inversed peak voltage under different feedback capacitances and gate resistances, the corresponding curve is drawn and a set of calculation methods for the optimization of the system parameters is put forward. The experiment is based on Infineon FS400R07A1E3_H5 IGBT modules and the drive circuit with capacitive feedback is designed. Experimental results indicate that when the current through IGBT is 400 A, the peak inverse voltage decreases by 80 V and the module temperature decreases in the feedback capacitive drive circuit. The correctness of the proposed theory is verified.

Key words: vehicle engineering, insulate gate bipolar transistor (IGBT), switching loss, gate drive, capacitance feedback, peak inverse voltage

CLC Number: 

  • U461
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